NDLI: Development of monolithic active pixel sensor in SOI Technology fabricated on the wafer with thick device layer

Content Provider	IEEE Xplore Digital Library
Author	Kucewicz, W. Armstrong, B.M. Gamble, H.S. Grabiec, P. Kucharski, K. Marczewski, J. Maziarz, W. Niemiec, H. Ruddell, F.H. Sapor, M. Tomaszewski, D.
Copyright Year	2008
Description	Author affiliation: Institute of Electron Technology, Lotnikow 32/46, 02-668 Warsaw, Poland (Grabiec, P.; Kucharski, K.; Marczewski, J.; Tomaszewski, D.) \|\| Department of Electronics, AGH-University of Science and Technology, al. Mickiewicza 30, 30-059, Krakow, Poland (Kucewicz, W.; Maziarz, W.; Niemiec, H.; Sapor, M.) \|\| NISRC, School of Electronics, Electrical Engineering & Computer Science, Queen¿s University Belfast, Ashby Building, Stranmillis Road, BT9 5AH, UK (Armstrong, B.M.; Gamble, H.S.; Ruddell, F.H.)
Abstract	Monolithic active pixel detectors fabricated in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. The fully depleted sensing diode has been manufactured under buried oxide (BOX) while read-out circuitry occupies upper silicon layer (‘device layer’). The development of the SOI detectors of ionizing radiation was started as a part of the SUCIMA project. During the project, it was proved that a monolithic SOI detector is a viable option for high-energy physics and medicine. The early prototypes suffered from significant leakage currents and soft breakdowns. These effects limited yield of production. Moreover, the p-wells (formed within the device layer and extended to the interface with the BOX), caused some local potential wells below the BOX at the top of depleted sensor area reducing the effective charge collection efficiency. The use a thicker device layer and optimized technology appeared to be a remedy.
Starting Page	1123
Ending Page	1125
File Size	1712200
Page Count	3
File Format	PDF
ISBN	9781424427147
ISSN	10957863
DOI	10.1109/NSSMIC.2008.4774598
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-19
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon on insulator technology Radiation detectors Ionizing radiation sensors Silicon radiation detectors Ionizing radiation Optimized production technology Readout electronics Diodes Manufacturing Circuits
Content Type	Text
Resource Type	Article

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