NDLI: Statistical NBTI-effect prediction for ULSI circuits

Content Provider	IEEE Xplore Digital Library
Author	Tong Boon Tang Murray, A.F. Binjie Cheng Asenov, A.
Copyright Year	2010
Description	Author affiliation: Dept. of Electronics and Electrical Eng., University of Glasgow, Glasgow G12 8LT, United Kingdom (Binjie Cheng; Asenov, A.) \|\| School of Engineering University of Edinburgh Edinburgh EH9 3JL, United Kingdom (Tong Boon Tang; Murray, A.F.)
Abstract	Static statistical variability and time-dependent reliability are traditionally analyzed separately. This paper presents a new methodology which combines both types of variability within a single circuit analysis framework. A comprehensive Negative Bias Temperature Instability (NBTI) model was implemented. Effects of random discrete dopants, line edge roughness and poly-Silicon granularity were considered. Using a 74X-series benchmark circuit (4-bit fast-carry adder) as an example, the concept of integrating both static statistical variability and time-dependent reliability into circuit analysis is demonstrated.
Starting Page	2494
Ending Page	2497
File Size	600625
Page Count	4
File Format	PDF
ISBN	9781424453085
DOI	10.1109/ISCAS.2010.5537132
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ultra large scale integration Niobium compounds Titanium compounds Degradation Hydrogen Circuit analysis MOSFET circuits Semiconductor process modeling Stress Circuits and systems
Content Type	Text
Resource Type	Article

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