NDLI: A novel RFID tag chip with temperature sensor in standard CMOS process

Content Provider	IEEE Xplore Digital Library
Author	Qi Zhang Peng Feng Shenghua Zhou Zhiqing Geng Nanjian Wu
Copyright Year	2010
Description	Author affiliation: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, P. R. China (Qi Zhang; Peng Feng; Shenghua Zhou; Zhiqing Geng; Nanjian Wu)
Abstract	This paper presents a novel RFID tag chip with temperature sensor in 0.18μm standard CMOS process. It consists of four blocks: RF/analog front-end circuit, 192-bit non-volatile memory (NVM), temperature sensor and digital baseband circuit. A CMOS UHF rectifier with dynamic bias using switch capacitor is proposed to improve the efficiency of rectification, while avoiding using costly Schottky diodes. We design a 192-bit NVM in standard CMOS process based on FN tunneling phenomenon with extremely small current density. It dissipates only 1.8μW/3.6μW for reading/writing operation. A 0.8μW smart temperature sensor with ±1°C resolution without power hungry ADCs is achieved. As a result, the power consumption is 5.8μW, 6.8μW, and 8.6μW for reading sensor, reading NVM and writing NVM respectively. The chip core area is $0.6mm^{2}$ in 0.18μm CMOS process.
Starting Page	1109
Ending Page	1112
File Size	643031
Page Count	4
File Format	PDF
ISBN	9781424453085
DOI	10.1109/ISCAS.2010.5537333
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	RFID tags Temperature sensors CMOS process Nonvolatile memory Circuits Switches Writing Radio frequency Baseband Rectifiers
Content Type	Text
Resource Type	Article

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