NDLI: Enhanced RF to DC CMOS rectifier with capacitor-bootstrapped transistor

Content Provider	IEEE Xplore Digital Library
Author	Ebrahimian, M. El-Sankary, K. El-Masry, E.
Copyright Year	2010
Description	Author affiliation: Dept. of Electrical and Computer Engineering, Dalhousie University, Halifax, NS, Canada, B3J 1Z1 (Ebrahimian, M.; El-Sankary, K.; El-Masry, E.)
Abstract	This paper presents a high efficient multi-stages full-wave RF to DC rectifier for RFID applications. The proposed converter employs diode-connected transistors with gate to drain bootstrapping capacitor to overcome threshold drop of voltage. Rectifying transistors are biased in triode region to improve the driving capability of the circuit while they operate at lower input voltages. Bulk biasing technique is applied to ensure faster turn on for level shifting transistors. Simulation results in 90nm CMOS technology at frequency of 920MHz, show that output voltage and power conversion efficiency at low input power level are improved compare to conventional rectifier using diode-connected transistors.
Starting Page	1655
Ending Page	1658
File Size	816815
Page Count	4
File Format	PDF
ISBN	9781424453085
DOI	10.1109/ISCAS.2010.5537481
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Rectifiers Diodes CMOS technology Radiofrequency identification Capacitors Threshold voltage Circuit simulation Frequency conversion Power conversion
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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