NDLI: Takagi-Sugeno fuzzy model to approximate MOSFET capacitance for VRM applications

Content Provider	IEEE Xplore Digital Library
Author	López, T. Alarcon, E. Guinjoan, F. Poveda, A.
Copyright Year	2010
Description	Author affiliation: Department of Electronic Engineering UPC BarcelonaTech 08034 Barcelona, Spain (Alarcon, E.; Guinjoan, F.; Poveda, A.) \|\| Research group Electronic Modules (EM), PHILIPS GmbH Forschungslab, Weisshausstr. 2, D-52066 Aachen (López, T.)
Abstract	The Takagi-Sugeno (TSK) fuzzy model has been extensively used in control applications because of its capability to efficiently approximate multidimensional characteristics. Its application to model circuits and devices has been hitherto reduced, despite its potential benefits. This work is devoted to model by means of TSK scheme the nonlinear characteristics of power MOSFET capacitances to evaluate its impact in the efficiency of Voltage Regulator Modules (VRM) targeting microprocessor supply. A systematic synthesis procedure is proposed to derive the TSK model from experimental data. Implementation of the fuzzy model in a general-purpose circuit simulator is included and its comparison with a look-up-table is discussed.
Starting Page	613
Ending Page	616
File Size	569489
Page Count	4
File Format	PDF
ISBN	9781424453085
DOI	10.1109/ISCAS.2010.5537519
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Takagi-Sugeno model MOSFET circuits Capacitance Power system modeling Fuzzy control Multidimensional systems Power MOSFET Voltage Regulators Microprocessors
Content Type	Text
Resource Type	Article

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