NDLI: Gate Material Engineered-Trapizoidal Recessed Channel MOSFET (GME-TRC) for Ultra Large Scale Integration (ULSI)

Content Provider	IEEE Xplore Digital Library
Author	Malik, P. Kumar, S.P. Chaujar, R. Gupta, M. Gupta, R.S.
Copyright Year	2008
Description	Author affiliation: Dept. of Electron. Sci., Univ. of Delhi, Delhi (Malik, P.; Kumar, S.P.; Chaujar, R.; Gupta, M.; Gupta, R.S.)
Abstract	In this work, the proposed GME-TRC MOSFET structure has been investigated for different negative junction depths (NJD) and different gate metal workfunction difference and its performance improvement over the TRC MOSFET is studied using ATLAS-3D and DEVEDIT-3D. The result clearly depicts that GME-TRC MOSFET exhibits superior performance as compared to TRC MOSFET in terms of threshold voltage roll-off, reduced punchthrough and DIBL; and improved switching speed of the device and current driving capabilities. Thus, the investigated device structure, in addition to providing SCEs suppression and hot carrier effect immunity, enhances the device reliability and performance in terms of the factors discussed earlier.
Starting Page	1
Ending Page	4
File Size	91177
Page Count	4
File Format	PDF
ISBN	9781424426416
DOI	10.1109/APMC.2008.4958124
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-16
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ultra large scale integration MOSFET circuits Threshold voltage Degradation Hot carrier effects Transconductance Electronic mail Semiconductor materials Semiconductor devices Laboratories
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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