NDLI: Status and challenges of PCM modeling

Content Provider	IEEE Xplore Digital Library
Author	Lacaita, A.L. Ielmini, D.
Copyright Year	2007
Description	Author affiliation: Politecnico di Milano & IU.NET, Milan (Lacaita, A.L.; Ielmini, D.)
Abstract	From the stage of concept-level alternative to Flash memories, the phase-change memory (PCM) is rapidly gaining the status of reference technology for high performance, high endurance next generation non volatile applications. To sustain the development of new and scaled PCM technologies, a comprehensive understanding and modelling of the cell at the material, cell and large-array levels are required. This paper will address the most significant achievements in the electrothermal modelling of PCM single cell. After reviewing the transport modeling in the amorphous and crystalline phases of the chalcogenide material, we focus on the application modeling of the cell, discussing programming current minimization by geometry optimization, trade-off between programming current and readout resistance and the program disturb issue. Scaling of the PCM is extensively addressed, comparing isotropic and non isotropic scaling and the respective impact on cell reliability. The open issues for PCM physical modeling are finally pointed out.
Starting Page	214
Ending Page	221
File Size	345576
Page Count	8
File Format	PDF
ISBN	9781424411238
ISSN	19308876
e-ISBN	9781424411245
DOI	10.1109/ESSDERC.2007.4430917
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-11
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phase change materials Crystalline materials Amorphous materials Crystallization Flash memory Phase change memory Paper technology Solid modeling Geometry Scalability
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Study of geometric effect on phase change random access memory

Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation

Electrothermal coupling and threshold-switching simulation study on phase change memory (PCM) Cell

Phase change memory parameters: Effects of atomic transformations

Current status of the phase change memory and its future

Towards Universal Memories? Exploring the Potential of Phase Change Materials

Analysis and optimization of erasing waveform in phase change memory arrays

Scaling analysis of phase-change memory technology

On the RESET-SET transition in Phase Change Memories

Status and challenges of PCM modeling

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Phase change memory parameters: Effects of atomic transformations

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