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Content Provider | IEEE Xplore Digital Library |
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Author | Zhihua Dong Jinyan Wang Rumin Gong Shenghou Liu Wen, C.P. Min Yu Fujun Xu Yilong Hao Bo Shen Yangyuan Wang |
Copyright Year | 2010 |
Description | Author affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 (Fujun Xu; Bo Shen) || Institute of Microelectronics, Peking University, Beijing, China, 100871 (Zhihua Dong; Jinyan Wang; Rumin Gong; Shenghou Liu; Wen, C.P.; Min Yu; Yilong Hao; Yangyuan Wang) |
Abstract | Compared with Ti/Al/Ni/Au Ohmic contacts, Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au with multiple Ti/Al stacks improved the thermal stability. Multiple-stacked Ohmic contacts showed lower degradation during long-time thermal aging at 600°C. The samples after degradation were tested with Transmission Electron Microscopy (TEM) to research the structural reasons. TEM results show that multiple stacks can avoid the producing of voids, which usually appear in the single Ti/Al stacked Ohmic metals. Al-Au alloy is believed to be the origin of the voids. While multiple Ti/Al stacks can reduce the size and quantity of Al-Au alloy and thus avoid the appearance of voids. The thermal stability enhancement of Ti/Al/…./Ti/Al/Ni/Au Ohmic contacts rendered it a great application in high temperature AlGaN/GaN HEMTs. |
Starting Page | 1359 |
Ending Page | 1361 |
File Size | 512157 |
Page Count | 3 |
File Format | |
ISBN | 9781424457977 |
e-ISBN | 9781424457984 |
DOI | 10.1109/ICSICT.2010.5667648 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2010-11-01 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Ohmic contacts Thermal stability Aging Gallium nitride Aluminum gallium nitride Gold thermal stability Ti/Al multiple stacks AlGaN/GaN Ohmic contact |
Content Type | Text |
Resource Type | Article |
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