NDLI: Morphological and microstructural evolution of Sn-patch in SnAgCu solder with Ni(V)/Cu under bump metallization

Content Provider	IEEE Xplore Digital Library
Author	Kai-Jheng Wang Jenq-Gong Duh Su-Yueh Tsai
Copyright Year	2009
Description	Author affiliation: Department of Materials Science and Engineering, Tsing Hua University, Hsinchu, Taiwan (Kai-Jheng Wang; Jenq-Gong Duh) \|\| Precision Instrument Center, Tsing Hua University, Hsinchu, Taiwan (Su-Yueh Tsai)
Abstract	In flip chip technology, the Ni(V)/Cu multi-metallic thin-films is a widely used under bump metallization (UBM), for doping 7 wt.% V into the Ni target can eliminate the magnetism of Ni during sputtering [1,2]. It was noted that V in the Ni(V) layer did not react with solders and intermetallic compounds (IMC) during reflow and aging process, yet a Sn-rich phase, as the so-called “Sn-patch”, would form in the Ni(V) layer [3]. The possible reason of Sn-patch formation may be the fast Sn diffusion from the solder matrix to the Ni(V) layer. However, the formation mechanism of Sn-patch and the detailed composition variation and structure evolution in Sn-patch were not fully discussed yet. In this study, Sn-patch would be analyzed by a field emission electron probe X-ray microanalyzer (FE-EPMA) and a transmission electron microscope (TEM) to elucidate the composition redistribution and the microstructure evolution, respectively. There existed concentration redistribution of the constituent element in Sn-patch, and its microstructure also varied with the aging time. On the basic of the detailed characterization by FE-EPMA and TEM, it was revealed that Sn-patch was consisted of crystalline Ni and amorphous Sn-rich phase after reflow, while V2Sn3 formed with amorphous Sn-rich phase during aging. A possible formation mechanism of Sn-patch was proposed, which could be employed to explain the corresponding composition variation and structure evolution associated with the Sn-patch formation.
Starting Page	558
Ending Page	561
File Size	2945196
Page Count	4
File Format	PDF
ISBN	9781424446582
DOI	10.1109/ICEPT.2009.5270687
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-08-10
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Metallization Aging Tin Electron emission Microstructure Amorphous materials Flip chip Thin films Doping Amorphous magnetic materials
Content Type	Text
Resource Type	Article

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