NDLI: First-principles based modeling for influence of epitaxy and packaging induced strains on emission properties of III-nitrides LED chips

Content Provider	IEEE Xplore Digital Library
Author	Han Yan Zhiyin Gan Xiaohui Song Zhaohui Chen Jingping Xu Sheng Liu
Copyright Year	2009
Description	Author affiliation: Department of Electronic of Science and Technology, Huazhong University of Science & Technology (Han Yan; Jingping Xu; Sheng Liu) \|\| Wuhan National Laboratory for Optoelectronics (Zhiyin Gan; Xiaohui Song; Zhaohui Chen)
Abstract	Undesired residual strain always exists in the epitaxial film inevitably as a result of lattice mismatch and thermal expansion mismatch between the substrate and the epitaxial film. The strain affects crystalline quality as well as optical and electrical properties of LED epitaxial film. In this paper, we report on the effects of strain on the emission properties of III-nitrides based LEDs grown on various substrates. As results, the band-gap energy of III-nitrides shows blue shift with increasing compressive strain and increases in tensile strain results in a decrease of band-gap energy. A linear relation of the band-gap of III-nitride with the biaxial strain is observed. In addition, III-nitrides materials with larger band-gap energy show a larger shift of emission energy, which means purple and ultraviolet LEDs will be more non-uniform than blue and red LEDs under the same strain states.
Starting Page	429
Ending Page	432
File Size	950935
Page Count	4
File Format	PDF
ISBN	9781424446582
DOI	10.1109/ICEPT.2009.5270718
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-08-10
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor process modeling Epitaxial growth Packaging Capacitive sensors Light emitting diodes Optical films Photonic band gap Substrates Tensile strain Lattices
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Light Emission and Detection for Si Photonics

III-V Nitrides For Optical Emitters

Semiconductor Light-Emitting Diodes with Separated Current-Injection and Light-Emitting Areas

GaN based white LED

Light emission from tensile-strained n-type epitaxial Ge thin films on Si by ultrahigh vacuum chemical vapor deposition

Monolithically Integrated III-Sb Superluminescent Light Emitting Diodes on Si (100) Substrates

InGaN light emitters: A comparison of quantum dot and quantum well based devices

Optical properties of wide bandgap nitride semiconductor heterostructures grown by MBE

Red hot [light emitting diodes]

First-principles based modeling for influence of epitaxy and packaging induced strains on emission properties of III-nitrides LED chips

Similar Documents

Light Emission and Detection for Si Photonics

III-V Nitrides For Optical Emitters

Semiconductor Light-Emitting Diodes with Separated Current-Injection and Light-Emitting Areas

GaN based white LED

Light emission from tensile-strained n-type epitaxial Ge thin films on Si by ultrahigh vacuum chemical vapor deposition

Monolithically Integrated III-Sb Superluminescent Light Emitting Diodes on Si (100) Substrates

InGaN light emitters: A comparison of quantum dot and quantum well based devices

Optical properties of wide bandgap nitride semiconductor heterostructures grown by MBE

Red hot [light emitting diodes]

First-principles based modeling for influence of epitaxy and packaging induced strains on emission properties of III-nitrides LED chips