NDLI: Analysis of subthreshold swing in multichannel tunneling carbon nanotube field effect transistor (MT-CNTFET)

Content Provider	IEEE Xplore Digital Library
Author	Es-Sakhi, A.D. Chowdhury, M.H.
Copyright Year	2015
Description	Author affiliation: Comput. Sci. & Electr. Eng., Univ. of Missouri - Kansas City, Kansas City, MO, USA (Es-Sakhi, A.D.; Chowdhury, M.H.)
Abstract	Tunnel Field Effect Transistor (TFET) based on Band-to-Band tunneling mechanism is a revolutionary device technology that has a very strong potential to break the thermodynamic barrier of conventional FETs and provide a very steep subthreshold slope. However, TFETs in general suffer from low on-state current $(I_{ON}).$ We propose a new TFET structure to increase the drain-to-source current of the tunneling device. The design is based on single-walled carbon nanotubes (SWCNTs). The idea is to provide multiple SWCNTs as tunneling path. We have demonstrated the concept with three SWCNTs. By having three tunneling paths in a single device higher ON current can be achieved while keeping the subthreshold swing lower than 60mV/decade. In this study, the diameter of the tubes and the gate oxide thickness are adjusted to obtain a higher $I_{on}$ and steeper subthreshold slope.
Starting Page	2309
Ending Page	2312
File Size	672426
Page Count	4
File Format	PDF
ISBN	9781479983919
DOI	10.1109/ISCAS.2015.7169145
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-24
Publisher Place	Portugal
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling Logic gates Field effect transistors Electric potential Carbon nanotubes Electric fields Electrostatics Single-Walled Carbon Nanotube (SWCNT) Band-to-Band Tunneling Tunneling Field Effect Transistor (TFET) Steep Subthreshold Slope
Content Type	Text
Resource Type	Article

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