NDLI: Study of sub-5 nm RRAM, tunneling selector and selector less device

Content Provider	IEEE Xplore Digital Library
Author	Kai-Shin Li Ming-Taou Lee Min-Cheng Chen Cho-Lun Hsu Lu, J.M. Lin, C.H. Chen, C.C. Wu, B.W. Hou, Y.F. Lin, C.Y. Chen, Y.J. Lai, T.Y. Li, M.Y. Yang, I. Wu, C.S. Fu-Liang Yang Yeh, W.K.
Copyright Year	2015
Description	Author affiliation: Nat. Appl. Res. Labs. (NARLabs), Nat. Nano Device Labs. (NDL), Hsinchu, Taiwan (Kai-Shin Li; Ming-Taou Lee; Min-Cheng Chen; Cho-Lun Hsu; Lu, J.M.; Lin, C.H.; Chen, C.C.; Wu, B.W.; Hou, Y.F.; Lin, C.Y.; Chen, Y.J.; Lai, T.Y.; Li, M.Y.; Yang, I.; Wu, C.S.; Yeh, W.K.) \|\| Res. Center for Appl. Sci., Taipei, Taiwan (Fu-Liang Yang)
Abstract	By using sidewall electrode technology, both record small functional $TiO_{2}$ selection device (1 × 5 $nm^{2})$ and $HfO_{2}$ based RRAM device (1 × 3 $nm^{2})$ were for the first time successfully demonstrated in this work, improving the understanding of the switching mechanism in an ultra-small, functional resistive random access memory (RRAM) device. The tunneling based low temperature back-end selection devices show high driving current density of > 10 $MA/cm^{2}$ and selectivity of > $10^{3}.$ The pulse driven cycle endurance of sub-5nm selection device and RRAM device reaches $10^{6}$ and $10^{3},$ respectively. Well controlled $TiO_{2}$ barrier produced with conformal plasma oxidation exhibits tight uniformity. The 1 × 3 $nm^{2}$ RRAM device exhibited an excellent performance, featuring a large on/off verified window (>100), and reasonable reliability (stress time > $10^{3}$ s). Furthermore, the 1 × 3 $nm^{2}$ RRAM device exhibited distinctive unipolar behavior when a high voltage and rapid switching operation (7 V, 50 ns) were applied. We also study on double oxide layer device and propose a physical mechanism picture to compare with previous study. This technology demonstrates the potential of future atomic-scale memories.
Starting Page	385
Ending Page	388
File Size	2385471
Page Count	4
File Format	PDF
ISBN	9781479983919
DOI	10.1109/ISCAS.2015.7168651
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-24
Publisher Place	Portugal
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling Tin Electrodes Hafnium compounds Switches Resistance Current density double oxide layer RRAM Atomic scaled side wall electrode
Content Type	Text
Resource Type	Article

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