NDLI: Perspectives of racetrack memory based on current-induced domain wall motion: From device to system

Content Provider	IEEE Xplore Digital Library
Author	Yue Zhang Chao Zhang Klein, J.-O. Ravelosona, D. Guangyu Sun Weisheng Zhao
Copyright Year	2015
Description	Author affiliation: Inst. d'Electron. Fondamentale, Univ. Paris-Sud, Orsay, France (Yue Zhang; Klein, J.-O.; Ravelosona, D.; Weisheng Zhao) \|\| Center for Energy-Efficient Comput. & Applic., Peking Univ., Beijing, China (Chao Zhang; Guangyu Sun)
Abstract	Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory is an attractive concept based on this phenomenon, which can store and transfer a series of data along a magnetic nanowire. Although the first prototype has been successfully fabricated, its advancement is relatively arduous caused by certain technique and material limitations. Particularly, the storage capacity issue is one of the most serious bottlenecks hindering its application for practical systems. In this paper, we present two alternative solutions to improve the capacity of racetrack memory: magnetic field assistance and chiral domain wall (DW) motion. The former one can lower the current density for DW shifting; the latter one can utilize materials with low resistivity. Both of them are able to increase the nanowire length and allow higher feasibility of large-capacity racetrack memory. Furthermore, system level simulation shows that a racetrack memory based cache can improve system performance by about 15.8% and significantly reduces the energy consumption, compared to the SRAM counterpart.
Starting Page	381
Ending Page	384
File Size	601498
Page Count	4
File Format	PDF
ISBN	9781479983919
DOI	10.1109/ISCAS.2015.7168650
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-24
Publisher Place	Portugal
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic tunneling Magnetic fields Magnetic domains Magnetic domain walls Magnetic heads Random access memory L2 cache Racetrack memory Magnetic field assistance Chiral domain wall motion
Content Type	Text
Resource Type	Article

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