NDLI: Ultra-low leakage sub-32nm TFET/CMOS hybrid 32kb pseudo DualPort scratchpad with GHz speed for embedded applications

Content Provider	IEEE Xplore Digital Library
Author	Gupta, N. Makosiej, A. Thomas, O. Amara, A. Vladimirescu, A. Anghel, C.
Copyright Year	2015
Description	Author affiliation: LETI, CEA, Grenoble, France (Makosiej, A.; Thomas, O.) \|\| Inst. Super. d'eElectronique de Paris(ISEP), Paris, France (Gupta, N.; Amara, A.; Vladimirescu, A.; Anghel, C.)
Abstract	In this paper, an ultra-low-leakage TFET/CMOS hybrid Dual-Port SRAM (DPSRAM) based scratchpad memory is proposed. DPSRAM cells are designed using TFETs to reduce the leakage power in the memory array as compared to CMOS. Peripheral circuits are designed using 28nm FDSOI technology to increase speed and to reduce area as compared to full TFET based memories. Performance and stability of the memory is analyzed for different supply voltages to support dynamic voltage frequency scaling (DVFS). Imbalanced single-ended sensing is proposed in the paper and different write-assist techniques are analyzed for the proposed TFET memory cell. In the analysis of TFET DPSRAM bitcell at 1V supply voltage the evaluated noise margins are 114mV and 185 mV for read and write, respectively, with a 5 orders of magnitude reduction in leakage as compared to a similar CMOS bitcell. Results of performance evaluation of the designed 32Kb TFET/CMOS DPSRAM show a gain of up to 79.2% in write speed using write assist at sub-1V supply voltages and less than 1 ns read/write cycle time for more than 1V supply voltages.
Starting Page	597
Ending Page	600
File Size	546731
Page Count	4
File Format	PDF
ISBN	9781479983919
DOI	10.1109/ISCAS.2015.7168704
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-24
Publisher Place	Portugal
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS integrated circuits SRAM cells Power demand Transistors Ports (Computers) Noise Dynamic voltage frequency scaling(DVFS) Tunneling FET (TFET) SRAM cell half selection(HS) write disturb(WD) SNM Low STandby Power(LSTP)
Content Type	Text
Resource Type	Article

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