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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yu-Chen Hsin Chien-Chou Chen Lau, J.H. Pei-Jer Tzeng Shang-Hung Shen Yi-Feng Hsu Shang-Chun Chen Chien-Ying Wn Jui-Chin Chen Tzu-Kun Ku Ming-Jer Kao |
| Copyright Year | 2011 |
| Description | Author affiliation: Electronics and Optoelectronics Research Labs, Industrial Technology Research Institute, Rm.168, Bldg.14, No.195, Sec. 4, Chung Hsing Road Chutung, Hsinchu 310, Taiwan (Yu-Chen Hsin; Chien-Chou Chen; Lau, J.H.; Pei-Jer Tzeng; Shang-Hung Shen; Yi-Feng Hsu; Shang-Chun Chen; Chien-Ying Wn; Jui-Chin Chen; Tzu-Kun Ku; Ming-Jer Kao) |
| Abstract | The effects of etch rate on TSV sidewall variation in 8” (200mm) and 12” (300mm) wafers are investigated in this study. Emphasis is placed on the determination of sidewall scallop with different etch rates ranging from 1.7μm/min to 18μm/min and various TSV diameters (1μm, 10μm, 20μm, 30μm, and 50μm) by design of experiments (DoE). The BHE in/out (2666Pa/2666Pa) are the same for all the cases. Also, characterizations of the sidewall scallop are performed by cross sections and scanning electron microscopy (SEM). Furthermore, with a same etch recipe, mask, and 9 (5μm, 10μm, 15μm, 20μm, 25μm, 30μm, 40μm, 55μm, and 65μm) TSV diameters, the etch results such as etch rate, TSV depth, and sidewall scallop of 200 and 300mm wafers are provided and compared, Finally, a set of useful process guidelines and recipes for optimal TSV etching is presented. |
| Starting Page | 1130 |
| Ending Page | 1135 |
| File Size | 3362838 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781612844978 |
| ISSN | 05695503 |
| e-ISBN | 9781612844985 |
| e-ISBN | 9781612844961 |
| DOI | 10.1109/ECTC.2011.5898652 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-05-31 |
| Publisher Place | Florida, USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Through-silicon vias Etching Distance measurement Passivation US Department of Energy Sulfur hexafluoride Guidelines |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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