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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Takano, A. Sunohara, M. Higashi, M. Hayakawa, I. Ohta, K. Sasajima, Y. |
| Copyright Year | 2011 |
| Description | Author affiliation: Corporate Technology Planning Group, Corporate Technology Planning Department, Research and Development Laboratory, Taiyo Yuden Co., Ltd., Nakamuroda-machi, Takasaki-shi, Gunma 370-3347, Japan (Hayakawa, I.; Ohta, K.; Sasajima, Y.) || Application & Technology Development Department, Research and Development Division, Shinko Electric Industries Co., Ltd. Kita Owaribe 36 Nagano-shi, Nagano 381-0014, Japan (Takano, A.; Sunohara, M.; Higashi, M.) |
| Abstract | In order to realize high-performance LSI systems, a Si interposer with Cu filled through silicon vias (TSVs) and a low inductance decoupling capacitor was developed in this work. We fabricated a thin film capacitor (TFC) on the Si interposer and evaluated its properties. Capacitance density of the TFC achieved $2uF/cm^{2}.$ Temperature coefficient of capacitance (TCC) was under 15% (25–125 deg C). The leakage current at 3V was below 1nA up to 100 deg C. The effect of TFC's location on impedance was measured. The interposer had lower impedance in case of the TFC embedded close to LSI. This enabled decreasing the impedance at high frequency range. Inductance values and an impedance curve of the Si interposer with the embedded multi-terminal TFC were also evaluated. As increasing number of the terminals, the inductance was decreased, and the impedance curve was declined over a wide frequency range. Finally, based on these technologies described above, we have fabricated a prototype of Si interposer. The embedded TFC is effective to minimize the impedance of power delivery network (PDN) at high frequencies. This Si interposer can improve the characteristics of LSI systems. |
| Starting Page | 849 |
| Ending Page | 854 |
| File Size | 2143455 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781612844978 |
| ISSN | 05695503 |
| e-ISBN | 9781612844985 |
| e-ISBN | 9781612844961 |
| DOI | 10.1109/ECTC.2011.5898610 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-05-31 |
| Publisher Place | Florida, USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Impedance Large scale integration Inductance Capacitance Through-silicon vias Capacitors |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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