NDLI: Investigation of temperature-dependent photoluminescence in multi-quantum wells

Content Provider	PubMed Central
Author	Fang, Yutao Wang, Lu Sun, Qingling Taiping, Lu Deng, Zhen Ma, Ziguang Jiang, Yang Jia, Haiqiang Wang, Wenxin Zhou, Junming Chen, Hong
Copyright Year	2015
Abstract	Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T < 50 K), is observed only for GaAs-AlxGa1-xAs quantum wells sample with p-n junction under non-resonant excitation. The origin of the anomalous increase of integrated PL intensity proved to be associated with the enhancement of carrier drifting because of the increase of carrier mobility in the temperature range from 15 K to 100 K. For non-resonant excitation, carriers supplied from the barriers will influence the temperature dependence of integrated PL intensity of quantum wells, which makes the traditional methods to acquire photoluminescence characters from the temperature dependence of integrated PL intensity unavailable. For resonant excitation, carriers are generated only in the wells and the temperature dependence of integrated PL intensity is very suitable to analysis the photoluminescence characters of quantum wells.
Related Links	http://dx.doi.org/10.1038/srep12718
Starting Page	12718
File Format	PDF
ISSN	20452322
e-ISSN	20452322
Journal	Scientific Reports
Volume Number	5
Language	English
Publisher	Nature Publishing Group
Publisher Date	2015-07-01
Access Restriction	Open
Rights Holder	Nature Publishing Group
Subject Keyword	Science and technology Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Multidisciplinary

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