NDLI: Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics

Content Provider	PubMed Central
Author	Li, Jinglei Li, Fei Li, Chao Yang, Guang Xu, Zhuo Zhang, Shujun
Copyright Year	2015
Abstract	The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I–V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I–V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I–V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I–V behavior of (Nb + In) co-doped TiO2 ceramics.
Related Links	http://dx.doi.org/10.1038/srep08295
Starting Page	8295
File Format	PDF
ISSN	20452322
e-ISSN	20452322
Journal	Scientific Reports
Volume Number	5
Language	English
Publisher	Nature Publishing Group
Publisher Date	2015-02-01
Access Restriction	Open
Rights Holder	Nature Publishing Group
Subject Keyword	Science and technology Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Multidisciplinary

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The Primary Origin of Excellent Dielectric Properties of (Co, Nb) Co-Doped $TiO_{2}$ Ceramics: Electron-Pinned Defect Dipoles vs. Internal Barrier Layer Capacitor Effect

Microstructural Evolution and High-Performance Giant Dielectric Properties of $Lu^{3+}/Nb^{5+}$ Co-Doped $TiO_{2}$ Ceramics

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped $TiO_{2}$ Ceramics

Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of $CaCu_{3}Ti_{4}O_{12}$ Ceramics Substituted by $Al^{3+}$ and $Ta^{5+}/Nb^{5+}$

Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals

Quasi-intrinsic colossal permittivity in Nb and In co-doped rutile TiO2 nanoceramics synthesized through a oxalate chemical-solution route combined with spark plasma sintering

The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics

Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline

Enhancing the thermoelectric properties of Nb-doped TiO2-based ceramics through in-situ synthesis of β-Sn inclusions at grain boundaries

Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics

Similar Documents

The Primary Origin of Excellent Dielectric Properties of (Co, Nb) Co-Doped $TiO_{2}$ Ceramics: Electron-Pinned Defect Dipoles vs. Internal Barrier Layer Capacitor Effect

Microstructural Evolution and High-Performance Giant Dielectric Properties of $Lu^{3+}/Nb^{5+}$ Co-Doped $TiO_{2}$ Ceramics

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped $TiO_{2}$ Ceramics

Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of $CaCu_{3}Ti_{4}O_{12}$ Ceramics Substituted by $Al^{3+}$ and $Ta^{5+}/Nb^{5+}$

Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals

Quasi-intrinsic colossal permittivity in Nb and In co-doped rutile TiO2 nanoceramics synthesized through a oxalate chemical-solution route combined with spark plasma sintering

The effect of secondary abnormal grain growth on the dielectric properties of La/Mn co-doped BaTiO3 ceramics

Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline

Enhancing the thermoelectric properties of Nb-doped TiO2-based ceramics through in-situ synthesis of β-Sn inclusions at grain boundaries

Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics