NDLI: Bright semiconductor scintillator for high resolution X-ray imaging

Content Provider	IEEE Xplore Digital Library
Author	Nagarkar, V.V. Gaysinskiy, V. Ovechkina, O. Miller, S. Singh, B. Liang Guo Irving, T.
Copyright Year	2009
Description	Author affiliation: Center for Synchrotron Radiation Research and Instrumentation, Illinois Institute of Technology, Chicago, IL 60616 USA (Liang Guo; Irving, T.) \|\| Radiation Monitoring Devices (RMD), Inc., Watertown, MA 02472 USA (Nagarkar, V.V.; Gaysinskiy, V.; Ovechkina, O.; Miller, S.; Singh, B.)
Abstract	We report on a novel approach to produce oxygen-doped zinc telluride (ZnTe:O), a remarkable group II-VI semiconductor scintillator, fabricated in the columnar-structured or polycrystalline forms needed to fulfill the needs of many demanding X-ray and γ-ray imaging applications. ZnTe:O has one of the highest conversion efficiencies among known scintillators, emission around 680 nm (which is ideally suited for CCD sensors), high density of 6.4 g/cm, fast decay time of ~1 μs with no afterglow, and orders of magnitude higher radiation resistance compared to commonly used scintillators. These properties allow the use of ZnTe:O in numerous applications, including X-ray imaging, nuclear medicine (particularly SPECT), room temperature radioisotope identification, and homeland security. Additionally, ZnTe:O offers distinct advantages for synchrotron-based high resolution imaging due to the absence of atomic absorption edges in the low energy range, which otherwise reduce resolution due to secondary X-ray formations. We have fabricated films of ZnTe:O using a vapor deposition technique that allows large-area structured scintillator fabrication in a time- and cost-efficient manner, and evaluated its performance for small-angle X-ray scattering (SAXS) at an Argonne National Laboratory synchrotron beamline. Details of the fabrication and characterization of the optical, scintillation and imaging properties of the ZnTe:O films are presented in this paper.
Starting Page	2387
Ending Page	2394
File Size	1001289
Page Count	8
File Format	PDF
ISBN	9781424439614
ISSN	10957863
DOI	10.1109/NSSMIC.2009.5402179
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Image resolution X-ray imaging Optical films High-resolution imaging Optical imaging Optical device fabrication Zinc compounds Charge coupled devices Immune system Nuclear medicine zinc telluride Microcolumnar scintillator semiconductor scintillator semiconductor radiation detector
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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