NDLI: Quantum dot solar cells: Effective conversion of IR radiation due to inter-dot n-doping

Content Provider	IEEE Xplore Digital Library
Author	Sablon, K.A. Little, J.W. Mitin, V. Sergeev, A. Vagidov, N. Reinhardt, K. Olver, K.A.
Copyright Year	2011
Description	Author affiliation: Army Research Lab, Adelphi, MD, United States (Sablon, K.A.; Little, J.W.; Olver, K.A.) \|\| University at Buffalo, Buffalo, NY, United States (Mitin, V.; Sergeev, A.; Vagidov, N.) \|\| Air Force Office for Scientific Research, Arlington, VA, United States (Reinhardt, K.)
Abstract	We report a 50% increase in power efficiency for our novel InAs/GaAs quantum dot with built-in charge (Q-BIC) solar cells. We found that n-doping the inter-dot space of a quantum dot solar cell (QDoSC) increases the short circuit current density from 15.07 $mA/cm^{2}$ in undoped QDoSC to 24.30 $mA/cm^{2}$ in the device doped to provide approximately six electrons per dot. To identify the physical mechanisms that provide this significant improvement, we investigate the photovoltaic response and its spectral characteristics in GaAs reference cell, undoped, n-doped, and p-doped QDoSCs. We found that the photovoltaic efficiency of the undoped QDoSC is almost the same as that of the reference cell. The efficiency monotonically improves with increasing n-doping, while the p-doping deteriorates the photovoltaic conversion. Studies of the photoluminescence of p- and n-doping show that the photoelectron capture into QDs is substantially faster than the hole capture, which leads to an accumulation of electrons in QDs. The built-in-dot electron charge enhances electron inter-subband QD transitions, suppresses the fast electron capture processes, and together with charged donors, forms the potential profile which precludes degradation of the open circuit voltage. All of these factors lead to the enhanced harvesting of IR energy and to a radical improvement of the QDoSC efficiency. Even higher efficiencies are anticipated for higher n-doping levels.
Starting Page	002646
Ending Page	002651
File Size	568196
Page Count	6
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186492
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Photovoltaic cells Gallium arsenide Quantum dots Radiative recombination Charge carrier processes Photoconductivity
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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