NDLI: Efficiency limitations of chalcopyrite and kesterite solar cells

Content Provider	IEEE Xplore Digital Library
Author	Scheer, R. Wilhelm, H.
Copyright Year	2011
Description	Author affiliation: Helmholtz-Zentrum Berlin für Materialien und Energie, D-14109 Berlin, Germany (Wilhelm, H.) \|\| Institute of Physics, Martin-Luther-Universität Halle-Wittenberg, D-06120 Halle, Germany (Scheer, R.)
Abstract	We consider the efficiency limitations of Cu(In, Ga)(S, Se) as well as CuZnSn(S, Se) champion solar cells based on published data and discuss the dominant recombination mechanism which limits the V of these devices. A CuIn solar cell with x≈0.3 is limited by recombination in the quasi-neutral-region including the back contact; we calculate a diffusion constant of electrons of about 0.5 $cm^{2}$ $s^{−1}.$ Cells with x=1 (Cu-poor CuGaSe) appear to be at the edge between recombination in the space-charge-region with very low bulk carrier lifetime and interface recombination. Solar cells based on Cu-rich Cu(In, Ga)(S, Se) as well as on kesterite CuZnSn(S, Se) appear to be limited by interface recombination as the activation energy of the saturation current is smaller than Eg, a. Here, we discuss the impact of a type II band line-up both at the absorber/buffer interface and at the buffer/window interface.
Starting Page	002500
Ending Page	002505
File Size	875367
Page Count	6
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186454
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Radiative recombination Physics Photonic band gap Solids Buffer layers
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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