NDLI: Investigation of passivation properties of thermal Al and SiN stack layers deposited on solar grade p-type CZ Si wafers

Content Provider	IEEE Xplore Digital Library
Author	Jae-Won Seo Hoon Oh Do-Hyun Kyung Myung-Ick Hwang Kyumin Lee Won-Jae Lee Eun-Chel Cho
Copyright Year	2011
Description	Author affiliation: Photovoltaic Technology Research Department, Hyundai Electro-Mechanical Research Institute, Hyundai Heavy Industries Co., Ltd, Yongin, Korea, 446-716 (Jae-Won Seo; Hoon Oh; Do-Hyun Kyung; Myung-Ick Hwang; Kyumin Lee; Won-Jae Lee; Eun-Chel Cho)
Abstract	The passivation layer of Al on the p-type CZ silicon wafers were carried out using a thermal ALD (atomic layer deposition), with the objective of realizing an industrial version of the PERL (passivated emitter, rear locally diffused) cells. The experiments were performed on bare wafers and device-like structures which have a textured front surface, phosphorus doped emitter, and antireflection coating layer. Different lifetime characteristics were shown with surface state depending on Al and SiN deposition. In the case of Al stacked layers on bare wafer, measured maximum minority carrier lifetime and implied voltage were 600 μs and 750mV, respectively. Maximum minority carrier lifetime and implied voltage for emitter sheet resistance of 100Ω/sq are 109 μs and 679mV before patterning and 88 μs and 673mV after patterning, respectively.
Starting Page	001512
Ending Page	001514
File Size	100510
Page Count	3
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186246
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum oxide Silicon Charge carrier lifetime Passivation Surface resistance Films
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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