NDLI: Innovative passivation for reducing degradation of a-Si/uc-Si tandem photovaltaic module

Content Provider	IEEE Xplore Digital Library
Author	Chih-Wei Chang Ching-In Wu Kai-Hsiang Chuang Chih-Hsiung Chang Kun-Chih Lin Chin-Yao Tsai
Copyright Year	2011
Description	Author affiliation: AURIA SOLAR, No. 9, Daye 1st Road, Tainan Science Park, Sinshih Township Tainan, 74146, Taiwan R.O.C. (Chih-Wei Chang; Ching-In Wu; Kai-Hsiang Chuang; Chih-Hsiung Chang; Kun-Chih Lin; Chin-Yao Tsai)
Abstract	The innovative passivation treatment has been developed for increasing the stabilized power of standard a-Si/μc-Si tandem module and building-integrated photovoltaic (BIPV) via well passivation of μc-Si material. By adopting external passivation technique, the open-circuit voltage (Voc) almost keeps in constant, furthermore, a significant improvement of Voc (∼3%) and fill factor (∼5%) could be obtained as comparing to reference ones. In the present work, a well passivation treatment for microcrystalline Si to prevent the post-oxidation of the cracks has been reported. About 9 % of improvement of degradation behavior and an outstanding performance of BIPV (93%) could be observed by this unique technique.
Starting Page	002991
Ending Page	002994
File Size	1096665
Page Count	4
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186573
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Passivation Silicon Degradation Photovoltaic cells Lighting IEC standards
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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