NDLI: Effects of quantum wells position and background doping on the performance of multiple quantum well solar cells

Content Provider	IEEE Xplore Digital Library
Author	Fujii, H. Yunpeng Wang Nakano, Y. Sugiyama, M.
Copyright Year	2011
Description	Author affiliation: Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan (Fujii, H.; Sugiyama, M.) \|\| Research Center for Advanced Science and Technology, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan (Yunpeng Wang; Nakano, Y.)
Abstract	Effects of multiple quantum well (MQW) position and p-type background doping in InGaAs / GaAsP MQW solar cells have been investigated using a semiconductor device simulator, APSYS, focusing on short circuit current I. With a high p-type background doping, degradation of I as MQW approaches p-region occurs due to recombination in the p-region. Carriers generated in the n-region are found out to be less sensitive to background doping than those in the p-region. Background doping also has indesired influences on carrier escape from wells, a critical issue for design of quantum well solar cells.
Starting Page	002609
Ending Page	002611
File Size	1184005
Page Count	3
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186482
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum well devices Doping Photovoltaic cells Simulation Gallium arsenide Electric fields Indium gallium arsenide
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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