NDLI: Photoluminescence imaging diagnosis of particulate iron contamination derived from HF dip and thermal oxidation

Content Provider	IEEE Xplore Digital Library
Author	Baker-Finch, S.C. McIntosh, K.R.
Copyright Year	2011
Description	Author affiliation: Centre for Sustainable Energy Systems, Australian National University, Canberra, Australia (Baker-Finch, S.C.) \|\| PV Lighthouse, Coledale, Australia (McIntosh, K.R.)
Abstract	Photoluminescence (PL) imaging is used to identify a contamination source that is introduced during a thermal oxidation of crystalline p-type silicon. The PL images indicate that the contamination severely decreases the carrier lifetime from ∼350 ms to 50 ms, and that it is localised and radially symmetric with a diameter of ∼10 mm. By taking PL images before and after the wafers are ‘light-soaked’, the contamination source is shown to be Fe and its net concentration is quantified. By solving the steady-state quasi-neutral semiconductor equations in cylindrical coordinates, the size of the original contaminant Fe particles is determined. This approach takes into account the out-diffusion of the Fe during thermal processing, as well as the lateral flow of carriers into the contaminated region; the latter is important due to the rapid and large change in lifetime in the vicinity of the defected region. We find that if the original particles were pure Fe, their diameter would be just 150–180 nm. Finally, we analyse the PL images of a comprehensive experiment to identify that the Fe particulates were deposited onto the wafer during the ‘HF dip’, which followed the RCA clean, and preceded the loading of the wafers into the furnace. Thus, we provide a methodology for the analysis of PL images of wafers affected by localised, lifetime-degrading contaminants; a proper treatment of carrier transport in such regions allows us to more accurately determine the size of the contaminating particles.
Starting Page	002851
Ending Page	002851
File Size	546476
Page Count	1
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186539
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Iron Contamination Hafnium Imaging Oxidation Australia Photoluminescence
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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