NDLI: Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells

Content Provider	IEEE Xplore Digital Library
Author	Lim, S.H. Allen, C.R. Ding Ding Xinyu Liu Furdyna, J.K. Vasileska, D. Yong-Hang Zhang
Copyright Year	2011
Description	Author affiliation: Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA (Xinyu Liu; Furdyna, J.K.) \|\| Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA (Lim, S.H.; Allen, C.R.; Ding Ding; Vasileska, D.; Yong-Hang Zhang)
Abstract	We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.
Starting Page	000252
Ending Page	000255
File Size	189066
Page Count	4
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6185893
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling Photovoltaic cells Semiconductor diodes Resistance Junctions Materials Charge carrier processes
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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