NDLI: High-efficiency back-junction silicon solar cell with an in-line evaporated aluminum front grid

Content Provider	IEEE Xplore Digital Library
Author	Kessler, M. Munster, D. Neubert, T. Mader, C.P. Schmidt, J. Brendel, R.
Copyright Year	2011
Description	Author affiliation: Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany (Kessler, M.; Munster, D.; Neubert, T.; Mader, C.P.; Schmidt, J.; Brendel, R.)
Abstract	We present n-type silicon PERT (passivated emitter and rear totally diffused) solar cells with an Al-passivated BBr-diffused back-junction emitter. The aluminum front side grid is evaporated in an industrial-type in-line evaporation system. The efficiency of the best 4 $cm^{2}$ solar cell is 19.6%, the fill factor is 79%, the open-circuit voltage is 660 mV and the short-circuit current density is 37.6 $mA/cm^{2}.$ We use (700±10) μm-thick silicon shadow masks for the in-line evaporation of the aluminum front grid. The masks are fabricated by a laser process and subsequent anisotropic etching. The resulting finger width of the in-line evaporated fingers is (60±20) μm. The dynamic aluminum deposition rate is 5 μm×m/min for a carrier speed of 0.33 m/min. During in-line evaporation the linear thermal expansion of the mask is limited to (15±5) μm. Our $n^{+}np^{+}-solar$ cell structure uses 2 high temperature diffusion processes: A P diffusion and a subsequent B diffusion. An essential element of our cell process is the order of these diffusions: We redistribute the phosphorus atoms of the front surface field during the subsequent high-temperature boron diffusion on the rear. The resulting phosphorus surface concentration is $(7±1)×10^{19}$ $cm^{3}$ and the corresponding sheet resistance is (80±10) Ω/□. A reference cell with a front grid statically evaporated in a laboratory-type reactor through a metal mask shows an efficiency of 20.4%. We thus confirm the high quality of the passivated boron back-junction emitter and of the efficiency potential of our solar cell structure.
Starting Page	001085
Ending Page	001090
File Size	2117487
Page Count	6
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186141
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Silicon Fingers Boron Aluminum oxide Laboratories
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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