NDLI: Metamorphic solar cells employing chemical mechanical polishing and MOVPE regrowth

Content Provider	IEEE Xplore Digital Library
Author	Mawst, L.J. Dudley, P. Kirch, J. Kim, T. Ruder, S. Kuech, T.F. Tatavarti, R.
Copyright Year	2011
Description	Author affiliation: Materials Science Program, University of Wisconsin - Madison, 1415 Engineering Dr., Madison, Wisconsin 53706, USA (Dudley, P.) \|\| Department of Chemical and Biological Engineering, University of Wisconsin - Madison, 1415 Engineering Dr., Madison, Wisconsin 53706, USA (Ruder, S.; Kuech, T.F.) \|\| MicroLink Devices Inc., Niles, Illinois (Tatavarti, R.) \|\| Department of Electrical and Computer Engineering, University of Wisconsin - Madison, 1415 Engineering Dr., Madison, Wisconsin 53706, USA (Mawst, L.J.; Kirch, J.; Kim, T.)
Abstract	We have investigated the MOVPE growth of InAs metamorphic buffer layer (MBL) structures with a focus on techniques to improve the surface morphology and determine the influence of morphology on subsequently grown single-junction device structures. To improve the surface roughness of the underlying MBL, Chemical-Mechanical Polishing (CMP) is employed and MOVPE regrowth of single-junction (SJ) solar cells on top of the polished surface is performed. AFM image analysis indicates the CMP process is effective in reducing the step-graded InAs MBL surface roughness from ∼7–10 nm (as-grown) to 2.3 nm post CMP. A post-CMP ozone/HF treatment was found to be effective in removing silica residue remaining on the surface from the CMP process, allowing for the growth of films on top of the MBL surface subjected to CMP. Improved short circuit current density (J) and external quantum efficiency (QE) were obtained from SJ (1eV) devices which employ the CMP process compared with those on as-grown MBLs.
Starting Page	000517
Ending Page	000520
File Size	462534
Page Count	4
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186007
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Surface roughness Rough surfaces Surface treatment Surface morphology Indium gallium arsenide Epitaxial layers Epitaxial growth
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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