NDLI: The Dependence of Multijunction Solar Cell Performance on the Number of Quantum Dot Layers

Content Provider	IEEE Xplore Digital Library
Author	Walker, A.W. Hinzer, K.
Copyright Year	1965
Abstract	The performance improvements of adding InAs quantum dots (QDs) in the middle subcell of a lattice matched triple-junction InGaP/InGaAs/Ge photovoltaic device are studied using the simulated external quantum efficiency, photocurrent, open circuit voltage, fill factor, and efficiency under standard testing conditions. The QDs and wetting layer are modeled using an effective medium consisting of trap states for the former and low confinement potentials for the latter. Although the efficiency stabilizes for more than 100 layers of QDs for the structure studied, the efficiency achieves an absolute efficiency of 31.1% under one sun illumination for 140 layers of QDs. This corresponds to a relative increase of 1.3% compared with a control structure with no QD layers. The performance of the device depends intricately on the magnitude of the confinement potentials representing the wetting layer.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	198
Ending Page	203
Page Count	6
File Size	994410
File Format	PDF
ISSN	00189197
Volume Number	50
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiative recombination Indium gallium arsenide Quantum dots Photovoltaic cells Photoconductivity Absorption Gallium arsenide semiconductor device modeling III–V semiconductors carrier recombination multi-junction solar cells quantum dots
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Carrier Dynamics in Quantum-Dot Multijunction Solar Cells Under Concentration

Spectrally Resolved Interband and Intraband Transitions by Two-Step Photon Absorption in InGaAs/GaAs Quantum Dot Solar Cells

GaAs quantum well-dots solar cells with spectral response extended to 1100 nm

Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells

The Effects of Absorption and Recombination on Quantum Dot Multijunction Solar Cell Efficiency

Impact of carrier dynamics on the photovoltaic performance of quantum dot solar cells

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport

Optical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure

The Dependence of Multijunction Solar Cell Performance on the Number of Quantum Dot Layers

Similar Documents

Carrier Dynamics in Quantum-Dot Multijunction Solar Cells Under Concentration

Spectrally Resolved Interband and Intraband Transitions by Two-Step Photon Absorption in InGaAs/GaAs Quantum Dot Solar Cells

GaAs quantum well-dots solar cells with spectral response extended to 1100 nm

Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells

The Effects of Absorption and Recombination on Quantum Dot Multijunction Solar Cell Efficiency

Impact of carrier dynamics on the photovoltaic performance of quantum dot solar cells

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport

Optical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure

The Dependence of Multijunction Solar Cell Performance on the Number of Quantum Dot Layers