NDLI: Numerical investigation of GaAs nipi solar cell performance

Content Provider	IEEE Xplore Digital Library
Author	Fedoseyev, A. Bald, T. Turowski, M.
Copyright Year	2011
Description	Author affiliation: CFD Research Corporation, Huntsville, Alabama, USA (Fedoseyev, A.; Bald, T.; Turowski, M.)
Abstract	Numerical investigations of GaAs nipi (n-type/intrinsic/p-type/intrinsic) doping superlattice solar cell performances have been performed and the results are presented. Models of various n-i-p-i layers were developed to explore the performance of the GaAs nipi architecture using CFDRC's NanoTCAD 3D device simulator. Performance parameters such as I-V characteristics, quantum efficiency and power efficiency were analyzed. AM0 spectrum was assumed. Results show that the short-circuit current density and cell efficiency increase asymptotically as the number of n-i-p-i layers increase, which is traded off by an observed decrease in the open circuit voltage. For layer thicknesses of 40nm, the optimum superlattice doping is on the order of 1E18 $cm^{−3}.$ The 10 layer nipi structure demonstrates a potential of dramatic relative efficiency increase (62%) compared to a single layer nipi device.
Starting Page	001548
Ending Page	001553
File Size	361713
Page Count	6
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186255
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Gallium arsenide Photovoltaic cells Semiconductor process modeling Superlattices Absorption
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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