NDLI: Al surface passivation: Electrical characterization using the Quantox tool

Content Provider	IEEE Xplore Digital Library
Author	Rothschild, A. Nishibe, S. Cui, J. Zhu, N. Debucquoy, M. Mamagkakis, S. Nagaswami, V. John, J.
Copyright Year	2011
Description	Author affiliation: KLA-Tencor, Zuchongzhi Rd, Shanghai, P.R.C. 201203 (Cui, J.; Zhu, N.) \|\| KLA-Tencor, One Technology Drive, Milpitas, CA 95035, USA (Nishibe, S.; Nagaswami, V.) \|\| Imec, Kapeldreef 75, 3001 Leuven, Belgium (Rothschild, A.; Debucquoy, M.; Mamagkakis, S.; John, J.)
Abstract	It has already been proven that Al can provide a high level of surface passivation for p and n-type crystalline silicon (c-Si) [1–4]. The passivation mechanism is considered to be related to two components: low interfacial trap density (D) and high amount of negative fixed charges (Q), which induce a built-in electric field, i.e. field effect passivation. However the surface passivation mechanism is not fully understood yet. In order to get understanding on the electrical parameters and process parameters which govern the passivation quality, a Corona charging tool was employed. This technique enables to bring together spatially resolved information on charges and carrier lifetime. Furthermore, the injection level can be tuned, which allows decoupling the bulk and surface contribution in the carrier lifetime measurement. Two main process parameters: the Al thickness and the post deposition anneal were varied to evaluate the sensitivity of the technique. Interface trap density (D), flatband voltage (V), total amount of charges (Q), near surface (NSτ) and bulk lifetime (Bτ) were extracted and compared to Calibrated QSSPC Photoluminescence (QSSPC-PL) measurements. The carrier lifetime information extracted from the “Quantox” shows to be consistent with the one extracted by QSSPC-PL measurements. As a result, the “Quantox” tool appears to be an appropriate tool for solar applications in order to study the quality of any passivation layers and Al in particular.
Starting Page	001508
Ending Page	001511
File Size	266884
Page Count	4
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186245
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum oxide Passivation Annealing Charge carrier lifetime Temperature measurement Silicon
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Analysis of blister formation in spatial ALD Al for silicon surface passivation

The spot-like defect on aluminum oxide passivation layer for crystalline silicon wafer

Amorphous-crystalline silicon interface prepared using DC saddle-field pecvd

On the blistering of atomic layer deposited Al as Si surface passivation

Detailed investigation of surface passivation methods for lifetime measurements on silicon wafers

Excellent passivation and low reflectivity Al /TiO bilayer coatings for n-wafer silicon solar cells

Investigation of passivation properties of thermal Al and SiN stack layers deposited on solar grade p-type CZ Si wafers

Modeling recombination at the Si-Al interface

Lifetime enhancement in EFG multicrystalline silicon [solar cells]

Al surface passivation: Electrical characterization using the Quantox tool

Similar Documents

Analysis of blister formation in spatial ALD Al for silicon surface passivation

The spot-like defect on aluminum oxide passivation layer for crystalline silicon wafer

Amorphous-crystalline silicon interface prepared using DC saddle-field pecvd

On the blistering of atomic layer deposited Al as Si surface passivation

Detailed investigation of surface passivation methods for lifetime measurements on silicon wafers

Excellent passivation and low reflectivity Al /TiO bilayer coatings for n-wafer silicon solar cells

Investigation of passivation properties of thermal Al and SiN stack layers deposited on solar grade p-type CZ Si wafers

Modeling recombination at the Si-Al interface

Lifetime enhancement in EFG multicrystalline silicon [solar cells]

Al surface passivation: Electrical characterization using the Quantox tool