NDLI: InGaAs/GaAsSb type-II quantum dots for intermediate band solar cell

Content Provider	IEEE Xplore Digital Library
Author	Shoji, Yasushi Akimoto, Katsuhrio Okada, Yoshitaka
Copyright Year	2012
Description	Author affiliation: Research Center for Advanced Science and Technology, The University of Tokyo, Meguro-ku, 153-8904, JAPAN (Shoji, Yasushi; Okada, Yoshitaka) \|\| Institute of Applied Physics, University of Tsukuba, Ibaraki, 305-8577, JAPAN (Akimoto, Katsuhrio)
Abstract	We have fabricated and characterized InGaAs/GaAsSb quantum dots solar cells (QDSCs) with a type-II band alignment structure. The photoluminescence (PL) spectrum indicates that radiative recombination in QDs is suppressed by embedding QDs with GaAsSb layers. In the excitation power dependence of PL, the PL peak of QDs embedded with GaAsSb layers show a large blueshift as reported for the case of a type-II band alignment. The external quantum efficiency (EQE) of QDSC increases in the longer wavelength range due to additive contributions from QD layers inserted in the intrinsic region. Further, an EQE increase due to photocurrent production by 2-step photon absorption measured for samples with InGaAs/GaAsSb structure indicates a higher response compared to the sample without GaAsSb layers.
Starting Page	1
Ending Page	4
File Size	1098445
Page Count	4
File Format	PDF
DOI	10.1109/PVSC-Vol2.2012.6656699
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Gallium arsenide Optical pumping Radiative recombination Photovoltaic cells Photoconductivity III–V semiconductor materials quantum dots photovoltaic cells
Content Type	Text
Resource Type	Article

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