NDLI: Superlattice solar cells on nanoimprinted photo-plasmon substrates

Content Provider	IEEE Xplore Digital Library
Author	Chakravarty, N. Pattnaik, S. Biswas, R. Bhattacharya, J. Slafer, D. Dalal, V.L.
Copyright Year	2011
Description	Author affiliation: Iowa State University, Ames, Iowa (Chakravarty, N.; Pattnaik, S.; Biswas, R.; Bhattacharya, J.; Dalal, V.L.) \|\| Lightwave Power, Inc., Cambridge, Mass (Slafer, D.)
Abstract	Thin film solar cells absorb only a small portion of the sunlight in one pass, which make light trapping a very important requirement for these solar cells. We report here the use of the two novel techniques (namely photonic and plasmonic) used in conjunction to achieve higher light trapping. When the thin film structure is deposited on a photo-plasmonic structure, which combines the light diffraction properties of a photonic structure with the reemission of light by a plasmonic structure, the current increases even more. We have obtained a 50% increase in current in a thin film of 0.9 micrometer by on a nanoimprinted photo-plasmon structure. In this study we also show the use of silicon alloys in a superlattice structure to further improve the photon absorption. The superlattice increases the quantum efficiency in the 600–700 nm range, and a properly designed photo-plasmon structure increases it in the 700–1000 nm range. A major advantage of the superlattice structure is that the crystallinity of the device remains constant throughout the thickness, without the need for changing hydrogen/silane dilution ratio. By using a-(Si, Ge) layers in the superlattice, one can shift the shoulder in optical absorption to longer wavelengths. Increasing the Ge content systematically increases the current in the cell.
Starting Page	000799
Ending Page	000801
File Size	198369
Page Count	3
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186075
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Absorption Photovoltaic cells Photonics Superlattices Silicon Nanoscale devices
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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