NDLI: In-plane quantum-dot superlattices of InAs on GaAsSb/GaAs(001) for intermediate band solar-cells

Content Provider	IEEE Xplore Digital Library
Author	Fujita, H. Yamamoto, K. Ohta, J. Eguchi, Y. Yamaguchi, K.
Copyright Year	2011
Description	Author affiliation: Department of Engineering Science, University of Electro-Communications, Tokyo, Japan (Fujita, H.; Yamamoto, K.; Ohta, J.; Eguchi, Y.; Yamaguchi, K.)
Abstract	Semiconductor quantum-dot superlattices (QD-SLs) have attracted considerable interests for intermediate band solar-cell (IB-SC) applications. In this study, in order to develop the IB-SCs using in-plane QD-SLs, ultra-high density InAs QDs with $4.0×10^{11}$ $cm^{−2}$ were grown on the GaAsSb/GaAs(001) by molecular beam epitaxy. The average lateral size and height of the InAs QDs were 17 nm and 2.8 nm, respectively. In spite of the closely-packed QD structure, the coalescence of neighbouring QDs was effectively suppressed by the Sb surfactant effect. The in-plane QD-SL characteristics based on the minibands were confirmed by photoluminescence (PL) properties. The InAs QD-SLs were capped by the GaAsSb layers to construct a type-2 band alignment. From time-resolved PL measurements, long carrier lifetime of 6.9 ns was obtained for the in-plane InAs QDs with the GaAsSb capping layer. Internal quantum efficiency (IQE) of the IB-SCs using the in-plane InAs/GaAsSb QD-SLs was evaluated, and the extended IQE was observed from 900 nm to 1300 nm. It was attributed to the optical absorption at the GaAsSb layers and the InAs QDs. The IB-SCs including three stacked in-plane QD-SLs enhanced the extended IQE.
Starting Page	002612
Ending Page	002614
File Size	385422
Page Count	3
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186483
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Absorption Buffer layers Optical buffering Charge carrier lifetime Superlattices Optical reflection
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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