NDLI: Hot carrier dynamics in InGaAs/GaAsP quantum well solar cells

Content Provider	IEEE Xplore Digital Library
Author	Hirst, L. Fuhrer, M. Farrell, D.J. LeBris, A. Guillemoles, J. Tayebjee, M.J.Y. Clady, R. Schmidt, T.W. Yunpeng Wang Sugiyama, M. Ekins-Daukes, N.J.
Copyright Year	2011
Description	Author affiliation: RCAST & School of Engineering, The University of Tokyo, Japan (Yunpeng Wang; Sugiyama, M.) \|\| EDF R&D, IRDEP, 6 quai Watier BP 49, F78401 Chatou Cedex 05, France (LeBris, A.; Guillemoles, J.) \|\| School of Chemistry, Building F11, The University of Sydney, NSW, 2006, Australia (Tayebjee, M.J.Y.; Clady, R.; Schmidt, T.W.) \|\| Department of Physics, Imperial College London, SW7 2AZ, UK (Hirst, L.; Fuhrer, M.; Farrell, D.J.; Ekins-Daukes, N.J.)
Abstract	A hot carrier solar cell is a device with a steady-state carrier population which is described by a higher temperature than the surrounding lattice. Thermalisation loss is reduced in such a device, offering the potential for substantial efficiency advantages over single junction solar cells. Despite clear efficiency benefits no real world device has ever been developed, partly because of the difficulty of developing a suitable absorber material with sufficiently limited interaction between excited carriers and lattice phonons. This study evaluates the suitability of strain balanced InGaAs/GaAsP quantum well structures as hot carrier absorbers. Ultrafast time resolved photoluminescence (TRPL) spectroscopy measurements are presented which demonstrate hot carrier populations beyond 2ns after excitation in a deep well sample. Continuous wave photoluminescence (CWPL) spectroscopy was used to compare steady-state carrier populations in deep and shallow well samples. In both cases hot distributions were observed under photon flux density greater than 10,000 Suns equivalent. Increasing incident photon flux density was shown to increase carrier distribution temperature, suggesting that the hot carrier effect might be enhanced in a multiple QW structure with better well region absorption. It was also found that the deep well sample achieved significantly higher carrier distribution temperatures than the shallow well sample, demonstrating that increasing quantum confinement further inhibits thermalisation pathways. This study provides a guide to the development of hot carrier solar cells as it indicates deep multiple quantum well samples might exhibit an enhanced hot carrier effect. Strain Balanced InGaAs/GaAsP is a particularly suitable material system for growing this type of structure, making it an exciting prospect for the development of a hot carrier absorber.
Starting Page	003302
Ending Page	003306
File Size	1190625
Page Count	5
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186643
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Photonics Photovoltaic cells Lattices Materials Temperature distribution Temperature measurement
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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