NDLI: Influence of damp heat on the electrical, optical, and morphological properties of encapsulated CuInGaSe devices

Content Provider	IEEE Xplore Digital Library
Author	Sundaramoorthy, R. Pern, F.J. Teeter, G. Li, J.V. Young, M. Kuciauskas, D. Call, N. Yan, F. To, B. Johnston, S. Noufi, R. Gessert, T.A.
Copyright Year	2011
Description	Author affiliation: National Center for Photovoltaics, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA (Sundaramoorthy, R.; Pern, F.J.; Teeter, G.; Li, J.V.; Young, M.; Kuciauskas, D.; Call, N.; Yan, F.; To, B.; Johnston, S.; Noufi, R.; Gessert, T.A.)
Abstract	CuInGaSe (CIGS) devices, encapsulated with different backsheets having different water vapor transmission rates (WVTR), were exposed to damp heat (DH) at 85°C and 85% relative humidity (RH) and characterized periodically to understand junction degradation induced by moisture ingress. Performance degradation of the devices was primarily driven by an increase in series resistance within first 50 h of exposure, resulting in a decrease in fill factor and, accompanied loss in carrier concentration and widening of depletion width. Surface analysis of the devices after 700-h DH exposure showed the formation of Zn(OH) from hydrolysis of the Al-doped ZnO (AZO) window layer by the moisture, which was detrimental to the collection of minority carriers. Minority carrier lifetimes observed for the CIGS devices using time resolved photoluminescence (TRPL) remained relatively long after DH exposure. By etching the DH-exposed devices and re-fabricating with new component layers, the performance of reworked devices improved significantly, further indicating that DH-induced degradation of the AZO layer and/or the CdS buffer was the primary performance-degrading factor.
Starting Page	003404
Ending Page	003409
File Size	782705
Page Count	6
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186678
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	DH-HEMTs Glass Degradation Zinc oxide Encapsulation Performance evaluation Resistance
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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