NDLI: Thermodynamic analysis for the prediction of N composition in coherently grown GaAsN for a multi-junction solar cell

Content Provider	IEEE Xplore Digital Library
Author	Kawano, J. Kangawa, Y. Yayama, T. Ito, T. Kakimoto, K. Koukitu, A.
Copyright Year	2011
Description	Author affiliation: Department of Physics Engineering, Mie University, Tsu, Mie 514-8507, Japan (Ito, T.) \|\| Department of Aeronautics and Astronautics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan (Yayama, T.) \|\| Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan (Kawano, J.; Kangawa, Y.; Kakimoto, K.) \|\| Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan (Koukitu, A.)
Abstract	Thermodynamic analysis was performed to investigate the coherent growth of GaAs thin films with low N content. In the present study, a new algorithm of the simulation code was developed to theoretically predict the relationship between solid composition and growth condition. This algorithm is applicable to wider varieties of combinations of gaseous sources than is the traditional algorithm. The system using trimethylgalllium (TMG), AsH, and NH was analyzed with the new code, and the results showed that the required input partial pressure ratio of NH to the group-V element is over 99% for incorporation of a small percent of N into a solid. It is difficult to incorporate N into the solid when the input V/III ratio is low, while in the case of a high input V/III ratio, stable growth with a small percent of N can proceed. In the case of coherently grown GaAs, the lattice constraint from the substrate would suppress the incorporation of nitrogen. On the other hand, a higher input Ga partial pressure ratio enhances the stable growth of GaAs with a small N content, though this condition tends to easily induce generation of dislocations. Furthermore, a much lower optimum N/As ratio in input gas can be achieved in the system with dimethylhydrazine (DMHy). This result confirms that the difference in gaseous sources has a great effect on N incorporation. When determining well-optimized experimental growth conditions, these influences including crystallinity should all be considered.
Starting Page	000496
Ending Page	000500
File Size	4415607
Page Count	5
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186002
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Solids Lattices Gallium Nitrogen Substrates Thermodynamics Mathematical model
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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