NDLI: High rate deposition of microcrystalline silicon with silicon oxide doped layers: Highlighting the competing roles of both intrinsic and extrinsinc defects on the cells performances

Content Provider	IEEE Xplore Digital Library
Author	Bugnon, G. Parascandolo, G. Soderstrom, T. Bartlome, R. Cuony, P. Hanni, S. Boccard, M. Holovsky, J. Despeisse, M. Meillaud, F. Ballif, C.
Copyright Year	2011
Description	Author affiliation: Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and thin film electronics laboratory, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland (Bugnon, G.; Parascandolo, G.; Soderstrom, T.; Bartlome, R.; Cuony, P.; Hanni, S.; Boccard, M.; Holovsky, J.; Despeisse, M.; Meillaud, F.; Ballif, C.)
Abstract	Hydrogenated microcrystalline silicon (μc-Si:H) has become a material of increasing interest these last years mainly for its use in cost-effective production of tandem and triple junction thin film silicon based solar cells. Lately, the use of novel doped silicon oxide (SiO) layers were shown to be very promising for increasing the solar cells efficiency [1,2]. We present in this study a detailed analysis on the possible reasons behind this significant increase of electrical performances. Complete solar cells were developed in an industrial type reactor with their intrinsic layer (i-layer) deposited at a high growth rate of 1 nm/s by VHF-PECVD. Different i-layer material quality and substrate roughness were systematically evaluated during this investigation. We demonstrate conversion efficiency increase of up to 29% when both these p-type and n-type doped SiO layers are used instead of the regular microcrystalline ones, while keeping the bulk of intrinsic material unchanged and efficiencies over 8% are achieved for a wider range of plasma parameters and substrate roughness. Extensive material analysis is presented hereafter to understand the physical origins for the improvements observed. XRD, Raman and FTIR spectroscopy, intrinsic stress, FTPS and SIMS measurements were done along with SEM images of the solar cells. It is found that devices with very different efficiencies can lead to similar FTIR and FTPS spectrum. We show that the integration of doped SiO layers reduces to some extent the influence of porous regions, i.e. microcracks, on the electrical properties of the solar cells, and the possible physical reasons for this improvement are discussed. The development of these extrinsic defects, not detected by FTPS and FTIR, is becoming especially detrimental on highly textured substrates, required for increased light trapping. This highlights the fundamental nature difference of intrinsic and extrinsic defects which can both drive the cells performances.
Starting Page	002566
Ending Page	002569
File Size	480383
Page Count	4
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186471
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Silicon Substrates Plasmas Photovoltaic systems
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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