NDLI: Mitigating heat dissipation and thermo-mechanical stress challenges in 3-D IC using thermal through silicon via (TTSV)

Content Provider	IEEE Xplore Digital Library
Author	Onkaraiah, S. Chuan Seng Tan
Copyright Year	2010
Description	Author affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University 50 Nanyang Avenue, Singapore 639798 (Onkaraiah, S.; Chuan Seng Tan)
Abstract	Thermal modeling of a 3-D IC stack consists of three IC layers bonded back-to-face (or face up) is performed. Significant temperature rise in the top layers is projected with the presence of dielectric isolation films between the IC layers. It is found that by inserting electrically isolated thermal through silicon via (TTSV) having Cu core and oxide liner that extends across the layers to the silicon substrate, significant temperature reduction can be achieved in the maximum temperature. The temperature profile of the 3-D IC stack depends strongly on materials selection for TTSV liner and conductor core, as well as TTSV dimensions. Thermo-mechanical stress induced by TTSV is also discussed and several approaches are proposed to control this stress. Simulation data also suggest that TTSV is useful in mitigating heat dissipation challenges in face-to-face bonding orientation and logic-on-memory stacking.
Starting Page	411
Ending Page	416
File Size	1568298
Page Count	6
File Format	PDF
ISBN	9781424464104
ISSN	05695503
e-ISBN	9781424464128
e-ISBN	9781424464111
DOI	10.1109/ECTC.2010.5490939
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal stresses Thermomechanical processes Three-dimensional integrated circuits Silicon Temperature Integrated circuit modeling Bonding Dielectric substrates Conducting materials Dielectric films
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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