NDLI: Terabit/s-class 24-channel bidirectional optical transceiver module based on TSV Si carrier for board-level interconnects

Content Provider	IEEE Xplore Digital Library
Author	Doany, F.E. Lee, B.G. Schow, C.L. Tsang, C.K. Baks, C. Kwark, Y. John, R. Knickerbocker, J.U. Kash, J.A.
Copyright Year	2010
Description	Author affiliation: IBM T. J. Watson Research Center 1101 Kitchawan Road, Yorktown Heights, NY 10598 (Doany, F.E.; Lee, B.G.; Schow, C.L.; Tsang, C.K.; Baks, C.; Kwark, Y.; John, R.; Knickerbocker, J.U.; Kash, J.A.)
Abstract	We report here on the design, fabrication and characterization of highly-integrated 3-D Optochips consisting of a Si carrier platform with 4 flip-chip attached components: two 24-channel 850-nm optoelectronic (OE) arrays (VCSELs and photodiodes) and two 24-channel CMOS ICs (receivers and laser drivers). The Si carrier incorporates three copper wiring levels for interconnection between the CMOS ICs and the OE arrays, and a dense array of electrical through-silicon-vias (TSVs) for the off-carrier dc and high-speed electrical connections. In addition, to allow optical transmission through the silicon carrier, 150-μm diameter “optical vias” (holes) are etched through the carrier at the locations of the optoelectronic array elements. The ICs and OEs are designed for 10–15 Gb/s operation to provide 48-channel modules with bidirectional aggregate bandwidths of 240 to 360 Gb/s. Optochips based on TSV Si carriers with flip-chip bonded ICs and OEs have been assembled using AuSn solder. DC characterization verified electrically and optically operative Optochips with 24 VCSELs and 24 photodiodes (PDs). Assembly of the Optochips to a high-speed, high-density organic carrier to form the full optical modules has also been developed and demonstrated. The Si carrier TSV technology is key to enabling the bonding of the Optochip to the organic carrier using a C4 solder process. Initial high-speed characterization of the complete module showed receiver channels operating at 12.5 Gb/s and transmitter channels operating up to 15 Gb/s. This is the first demonstration of Terabus optical modules with dense 24 TX + 24 RX transceiver Optochips based on TSV Si carriers.
Starting Page	58
Ending Page	65
File Size	1590575
Page Count	8
File Format	PDF
ISBN	9781424464104
ISSN	05695503
e-ISBN	9781424464128
e-ISBN	9781424464111
DOI	10.1109/ECTC.2010.5490882
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical interconnections Transceivers Through-silicon vias Optical receivers Optical transmitters High speed optical techniques Optical arrays Vertical cavity surface emitting lasers Photodiodes Bonding
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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