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Content Provider | IEEE Xplore Digital Library |
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Author | Ying-Hui Wang Suga, T. |
Copyright Year | 2010 |
Description | Author affiliation: Department of Precision Engineering, Graduate School of Engineering, The University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan (Ying-Hui Wang; Suga, T.) |
Abstract | The influence of bonding atmosphere was investigated for the wafer bonding at 25~200°C using a surface activated bonding method. The results of the analysis of activated Si surfaces under different vacuum background and the residual gases in vacuum before and after Ar fast atom beam irradiation is reported. Based on the analysis, bonding of Si wafers in nitrogen atmosphere is demonstrated with showing the effect of the timing of nitrogen introduction into the bonding chamber. The bonding energy of the bonded Si-Si wafer may reach 2 $J/m^{2}$ under the vacuum pressure of 5 × $10^{−5}$ Pa and N2 atmosphere by controlling the exposure time and the residual gas of water to less than 5 × $10^{−4}$ Pa-s. Using Au or Cu thin-films can reduce the influence of bonding atmosphere. Bond interfaces with few voids can be achieved, which is benefit on diffusion and plastic deformation of the Au or Cu thin-films. |
Starting Page | 435 |
Ending Page | 439 |
File Size | 1178844 |
Page Count | 5 |
File Format | |
ISBN | 9781424464104 |
ISSN | 05695503 |
e-ISBN | 9781424464128 |
e-ISBN | 9781424464111 |
DOI | 10.1109/ECTC.2010.5490936 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2010-06-01 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Wafer bonding Atmosphere Nitrogen Gold Thin films Gases Argon Atomic beams Timing Elementary particle vacuum |
Content Type | Text |
Resource Type | Article |
Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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