NDLI: Analysis of GaAs/AlGaAs quantum nanodisk solar cell with intermediate band carrier transportation

Content Provider	IEEE Xplore Digital Library
Author	Ogura, A. Sogabe, T. Farrell, D.J. Okada, Y.
Copyright Year	2014
Description	Author affiliation: Res. Center for Adv. Sci. & Technol. (RCAST), Tokyo, Japan (Ogura, A.; Sogabe, T.; Farrell, D.J.; Okada, Y.)
Abstract	We have developed an 1-D drift-diffusion model for an intermediate band solar cell (IBSC) based on Scharfetter-Gummel scheme. The effect of the electron transportation in intermediate band is investigated by a rigorous solution to the electron density in IB. Due to the introduction of the electron mobility in intermediate band (IB), the electron density in IB tends to become uniform. Varying the electron mobility in IB causes the change of the potential profile and electron density in IB region. Moreover, the conversion efficiency including the electron mobility in the IB presented here decreases compared to results based on sole generation/recombination process model, which is the conventional method. However, the efficiency can be fully recovered by the light concentration, indicating the importance to enhance the electron density in IB.
Starting Page	2892
Ending Page	2895
File Size	658993
Page Count	4
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925536
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indexes Electron mobility Equations Differential equations Spontaneous emission rigorous solution intermediate band solar cell (IBSC) electron transportation in IB electron mobility in IB
Content Type	Text
Resource Type	Article

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