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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zi Ouyang Jie Cui Yang Li Zhongtian Li Lennon, A. |
| Copyright Year | 2014 |
| Description | Author affiliation: Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia (Zi Ouyang; Jie Cui; Yang Li; Zhongtian Li; Lennon, A.) |
| Abstract | Light-induced anodisation (LIA) is an innovative method to produce oxide films on the surface of crystalline silicon solar cells in an inexpensive electrochemical bath under light illumination. LIA of aluminum to form anodic aluminium oxide (AAO) has been demonstrated to provide excellent passivation and anti-reflection effects.. This article reports on recent studies on the structural properties of AAO layers using ellipsometry, microscope, and a few modelling techniques. The effects of the light intensity and the thickness of the aluminum (Al) precursor on the refractive index, porosity and barrier layer thickness of the AAO films are revealed. The effects of the applied voltage on the AAO growth rate are investigated. All the studies are served to provide a guideline to quick formation of uniform AAO layers for effective passivation and anti-reflection. |
| Starting Page | 1234 |
| Ending Page | 1237 |
| File Size | 747676 |
| Page Count | 4 |
| File Format | |
| e-ISBN | 9781479943982 |
| DOI | 10.1109/PVSC.2014.6925138 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-06-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Aluminum oxide Refractive index Silicon Ellipsometry Films Passivation photovoltaic solar cell light induced anodisation anodic aluminium oxide ellipsometry silicon |
| Content Type | Text |
| Resource Type | Article |
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