NDLI: Simulation of electron escape from GaNAs/GaAs quantum well solar cells

Content Provider	IEEE Xplore Digital Library
Author	Yongjie Zou Honsberg, C.B. Freundlich, A. Goodnick, S.M.
Copyright Year	2014
Description	Author affiliation: Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA (Yongjie Zou; Honsberg, C.B.; Goodnick, S.M.) \|\| Center for Adv. Mater., Univ. of Houston, Houston, TX, USA (Freundlich, A.)
Abstract	Quantum wells embedded in the active region of single-bandgap solar cells have previously been shown to increase the absorption of photons of energies lower than the host bandgap, while maintaining the open-circuit voltage. Fast carrier escape from the quantum wells is essential to achieve such performance enhancements. In the present work, we use ensemble Monte Carlo simulation to model the escape time for photo-excited carriers in dilute nitride GaNAs/GaAs quantum wells to the continuum, for different well structures. The simulated electron escape rate due to polar optical phonon absorption and emission decreases exponentially with the well depth in agreement with thermionic emission theory.
Starting Page	2908
Ending Page	2911
File Size	442322
Page Count	4
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925540
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phonons Electron optics Integrated optics Optical scattering Absorption Welding Electric potential photovoltaic cells ensemble Monte Carlo carrier escape quantum well
Content Type	Text
Resource Type	Article

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