NDLI: Analysis of emitter performance contacted with silicide induced dopant segregation

Content Provider	IEEE Xplore Digital Library
Author	Lenz, M. Knoch, J.
Copyright Year	2014
Description	Author affiliation: Inst. of Semicond. Electron., RWTH Aachen Univ., Aachen, Germany (Lenz, M.; Knoch, J.)
Abstract	The emitter in silicon solar cells has to fulfill two contrary conditions: a high surface doping concentration is required in order to allow ohmic contact formation. At the same time, however, the surface doping concentration should be small in order to suppress Auger recombination and decrease the surface recombination. Selective emitter structures have been proposed to resolve this trade-off but realizations so far either are not self-aligned exhibiting a rather large highly doped area where recombination can occur, or the emitter doping profile cannot be optimized without jeopardizing ohmic contact formation. Using nickel silicidation induced dopant segregation we were recently able to show that almost any emitter can be contacted due to collecting the dopants at the silicide/silicon interface. As a result, the emitter can be optimized in terms of low Auger and surface recombination independent of the contact formation. Here, two-dimensional simulations are carried out in order to optimize the emitter yielding highest efficiencies. We find that deep, rather lowly doped emitters and relatively large distances of adjacent front-side contacts result in a substantial performance increase.
Starting Page	2994
Ending Page	2997
File Size	1476382
Page Count	4
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925562
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Silicides Doping Silicon Nickel alloys Junctions silicon solar cells Dopant segregation nickel silicide self alignment
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation

Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance

Study of Nickel Silicide Formation and Associated Fill-Factor Loss Analysis for Silicon Solar Cells With Plated Ni-Cu Based Metallization

Strained silicon NMOS with nickel-silicide metal gate

Formation of arsenic segregated Ytterbium and Nickel silicide using microwave annealing

Electrical characterization of thermally-formed nickel silicide for nickel-copper plated solar cell contacts

Doping of monolayer graphene for silicon based Schottky junction solar cells

The enhancement of thin silicon solar cell by selective emitter structure

Screen-printed dopant paste interdigitated back contact solar cells

Analysis of emitter performance contacted with silicide induced dopant segregation

Similar Documents

Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation

Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance

Study of Nickel Silicide Formation and Associated Fill-Factor Loss Analysis for Silicon Solar Cells With Plated Ni-Cu Based Metallization

Strained silicon NMOS with nickel-silicide metal gate

Formation of arsenic segregated Ytterbium and Nickel silicide using microwave annealing

Electrical characterization of thermally-formed nickel silicide for nickel-copper plated solar cell contacts

Doping of monolayer graphene for silicon based Schottky junction solar cells

The enhancement of thin silicon solar cell by selective emitter structure

Screen-printed dopant paste interdigitated back contact solar cells

Analysis of emitter performance contacted with silicide induced dopant segregation