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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yifeng Chen Altermatt, P.P. Jianwen Dong Shu Zhang Jiajing Liu Daming Chen Weiwei Deng Yuling Jiang Binhui Liu Wenming Xiao Huijun Zhu Hui Chen Haijun Jiao Xiujuan Pan Ming Zhong Dianlei Wang Jian Sheng Yingbin Zhang Hui Shen Zhiqiang Feng Verlinden, P.J. |
| Copyright Year | 2014 |
| Description | Author affiliation: State Key Lab. of PV Sci. & Technol., Trina Solar, Changzhou, China (Jianwen Dong; Shu Zhang; Daming Chen; Weiwei Deng; Yuling Jiang; Wenming Xiao; Huijun Zhu; Hui Chen; Haijun Jiao; Xiujuan Pan; Ming Zhong; Jian Sheng; Yingbin Zhang; Zhiqiang Feng; Verlinden, P.J.) || Dept. of Solar Energy, Leibniz Univ. of Hannover, Hannover, Germany (Altermatt, P.P.) || Inst. for Solar Energy Syst., Sun Yat-Sen Univ., Guangzhou, China (Yifeng Chen; Jiajing Liu; Binhui Liu; Dianlei Wang; Hui Shen) |
| Abstract | In this paper, a detailed investigation of the Al-alloyed local rear contacts for industrial PERC cells is presented. Three types of voids and their influences to PERC cells are evaluated with 2D numerical device simulations. By a detailed study of the formation mechanism of local contacts, an effective method of two-step metallization is proposed to suppress the generation of voids. In step 1, the Al paste is locally printed to limit the lateral diffusion of Al into Si during the firing process. In step 2, a full-area metallization with low temperature firing is applied to connect all the rear local Al contacts. With this method, a clear decrease of the void density after an industrial firing process is demonstrated. Nearly 0% voids rate can be achieved if the design width of the Al contact is small enough. This can prevent the recombination of minority carriers at the rear side, and contribute to $V_{oc}$ over 666 mV. Average cell efficiency of 20.26% and best efficiency of 20.50% are achieved in batch run in a pilot line. With advanced module technologies, a best module power of 326.3 $W_{p}$ was achieved for a 60-cell-based module and independently confirmed. |
| Starting Page | 3322 |
| Ending Page | 3325 |
| File Size | 1418108 |
| Page Count | 4 |
| File Format | |
| e-ISBN | 9781479943982 |
| DOI | 10.1109/PVSC.2014.6925645 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-06-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Printing Silicon Photovoltaic cells Metallization Passivation Firing Numerical models screen printing voids PERC cell metallization |
| Content Type | Text |
| Resource Type | Article |
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