NDLI: Surface passivation of c-Si by Atomic Layer Deposition TiO thin films deposited at low temperature

Content Provider	IEEE Xplore Digital Library
Author	Ing-Song Yu I-Hsuan Chang Hsyi-En Cheng Yung-Sheng Lin
Copyright Year	2014
Description	Author affiliation: Dept. of Mater. Sci. & Eng., Nat. Dong Hwa Univ., Hualien, Taiwan (Ing-Song Yu) \|\| R&D Dept., E-Ton Solar Tech. Co., Ltd., Tainan, Taiwan (Yung-Sheng Lin) \|\| Dept. of Electro-Opt. Eng., Southern Taiwan Univ. of Sci. & Technol., Tainan, Taiwan (I-Hsuan Chang; Hsyi-En Cheng)
Abstract	For the silicon surface passivation, we investigate titanium dioxide $(TiO_{2})$ deposited on p-type FZ silicon wafer by Atomic Layer Deposition (ALD) technique at low temperature as 200°. In the repost, four kinds of film thickness: 8 nm, 15 nm, 35 nm and 66 nm were proposed, and we found amorphous $TiO_{2}$ thin film with thickness 8 nm have very good surface passivation properties on Si, and its surface recombination velocity can be lowered to 44.24 cm/s, which is good for the applications in crystalline silicon solar cells. However, we find the surface passivation properties decline as increasing the thickness of $TiO_{2}$ films. From the characterization of Scanning Electron Microscopy (SEM), Grazing Incidence X-Ray (GIXRD), Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and stress measurements of thin film, $TiO_{2}$ anatase phase forms due to the stress inducing phase transformation, and surface roughness increases a lot for thicker $TiO_{2}$ films. The phase transformation and surface roughening make the defects formation at the interface of Si and $TiO_{2},$ which increase surface recombination velocity.
Starting Page	1271
Ending Page	1274
File Size	937034
Page Count	4
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925148
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Silicon Photovoltaic cells Microscopy Annealing Indexes Radio frequency anatase titanium dioxide Atomic Layer Deposition surface passivation surface recombination velocity silicon solar cell
Content Type	Text
Resource Type	Article

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