NDLI: A critical analysis on the role of back surface passivation for a-Si/c-Si heterojunction solar cells

Content Provider	IEEE Xplore Digital Library
Author	Chatterji, N. Khatavkar, S. Voz, C. Morales-Vilches, A. Puigdollers, J. Arora, B.M. Aldrin, A. Nair, P.R.
Copyright Year	2014
Description	Author affiliation: Dept. d'Eng. Electron., Univ. Politec. De Catalunya, Barcelona, Spain (Voz, C.; Morales-Vilches, A.; Puigdollers, J.) \|\| Dept. of Electr. Eng., IIT Bombay, Mumbai, India (Chatterji, N.; Khatavkar, S.; Arora, B.M.; Nair, P.R.) \|\| Dept. of Energy Sci. & Eng., IIT Bombay, Mumbai, India (Aldrin, A.)
Abstract	Back surface passivation is a well-known method to reduce carrier recombination and hence improves the efficiency of crystalline silicon solar cells. In this manuscript, we critically analyze the role of this process for a-Si/c-Si heterojunction solar cells through a combination of device fabrication, multiple characterization techniques, and modeling. Curiously, our experimental results indicate that dark current characteristics of these devices do not scale in accordance with the improvements in carrier lifetime achieved through back surface passivation. Our results indicate these puzzling experimental results could be due to the possibility that carrier injection from crystalline silicon base significantly contributes to the dark current of these devices. This result has obvious and significant implications towards understanding the device physics and efficiency optimization of a-Si/c-Si heterojunction devices.
Starting Page	2456
Ending Page	2458
File Size	491841
Page Count	3
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925426
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analytical models Passivation Velocity measurement Indexes Hafnium Performance evaluation silicon amorphous Si heterojunction solar cell carrier lifetime photovoltaic cells
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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