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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Williams, J.J. Jeffries, A.M. Ding, L. Gangam, S. Ghosh, K. Williamson, T.L. Bertoni, M.I. Honsberg, C.B. |
| Copyright Year | 2014 |
| Description | Author affiliation: Los Alamos Nat. Lab., Los Alamos, NM, USA (Williamson, T.L.) || Arizona State Univ., Tempe, AZ, USA (Williams, J.J.; Jeffries, A.M.; Ding, L.; Gangam, S.; Ghosh, K.; Bertoni, M.I.; Honsberg, C.B.) |
| Abstract | In recent years the development of heterojunction silicon based solar cells has gained much attention, lead largely by the efforts of Panasonic's HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. The band gap, mobilities, and electron affinity of GaN make it an interesting candidate to solve problems of parasitic absorption while selectively extracting electrons. Using a novel MBE based growth technique, thin films of GaN have been deposited at temperature significantly lower than industry standards. Crystalline measurements and absorption data of GaN are presented. Additionally, effects of deposition on the silicon wafer lifetimes are presented. |
| Starting Page | 0841 |
| Ending Page | 0843 |
| File Size | 632989 |
| Page Count | 3 |
| File Format | |
| e-ISBN | 9781479943982 |
| DOI | 10.1109/PVSC.2014.6925046 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-06-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium nitride Silicon Films Absorption X-ray diffraction Temperature measurement Nitrogen silicon gallium nitride heterojunction interface physics molecular beam epitaxy |
| Content Type | Text |
| Resource Type | Article |
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