NDLI: Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon

Content Provider	IEEE Xplore Digital Library
Author	Zheng, P. Rougieux, F.E. Macdonald, D. Cuevas, A.
Copyright Year	2014
Description	Author affiliation: Res. Sch. of Eng., Australian Nat. Univ., Canberra, ACT, Australia (Zheng, P.; Rougieux, F.E.; Macdonald, D.; Cuevas, A.)
Abstract	Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By using data measured on n-type silicon wafers with resistivity from 1Ω.cm to 100Ω.cm, we have previously developed a simple mathematical expression to describe the mobility sum as a function of carrier injection, wafer doping and temperature. In this paper, we provide experimental results for p-type silicon wafers from 150K to 450K and show that they are consistent with this parameterization. We show that our parameterization of the mobility sum in silicon is valid for both p-and n-type silicon for various carrier injection, wafer doping and temperature from 150K to 450K. The new parameterization is also an experimental validation of Klaassen's and Dorkel-Leturcq's models under carrier injection at different temperatures.
Starting Page	0129
Ending Page	0134
File Size	871449
Page Count	6
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925391
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Silicon Semiconductor process modeling Doping Mathematical model Temperature dependence Charge carrier density mobility sum silicon charge carrier mobility temperature and injection dependent
Content Type	Text
Resource Type	Article

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